Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells.
نویسندگان
چکیده
By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs(2)CO(3) to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells.
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ورودعنوان ژورنال:
- Advanced materials
دوره 24 17 شماره
صفحات -
تاریخ انتشار 2012